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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF346 VHF power MOS transistor
Product specification Supersedes data of September 1992 1996 Oct 02
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Easy power control * Good thermal stability * Gold metallization ensures excellent reliability. APPLICATIONS * Linear amplifier applications in Television transmitters and transposers. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PINNING-SOT119 PIN 1 2 3 4 5 6 SYMBOL s s g d s s
BLF346
DESCRIPTION source source gate drain source source
handbook, halfpage
1
2 d g s
3
4
5
6
MAM268
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance in a linear amplifier. MODE OF OPERATION Class-A Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak synchronization level. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 02 2 f (MHz) 224.25 VDS (V) 28 ID (A) 3 Th (C) 70 25 PL (W) >24 typ. 30 GP (dB) >14 typ. 16.5 dim (dB) (1) -52 -52
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDSS VGSS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF346
MAX. 65 20 13 130 150 200 V V A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 130 W Tmb = 25 C; Ptot = 130 W VALUE 1.35 0.2 K/W K/W UNIT
handbook, halfpage
50
MRA931
handbook, halfpage
200
MGG104
ID (A) 10
(1) (2)
Ptot (W) 150 (2)
100 (1) 1 50
10-1 1 10 VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
1996 Oct 02
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 50 mA VDS = 10 V; ID = 5 A VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 3 - - - - - TYP. - - - - - 4.2 0.2 22 225 180 25
BLF346
MAX. - 2.5 1 4.5 100 - 0.3 - - - -
UNIT V mA A V mV S A pF pF pF
drain-source breakdown voltage VGS = 0; ID = 50 mA
drain-source on-state resistance VGS = 10 V; ID = 5 A
handbook, halfpage
2
MGG105
handbook, halfpage
40
MGG106
T.C. (mV/K) 0
ID (A) 30
-2
20
-4
10
-6 10-2
10-1
1
ID (A)
10
0 0 5 10 15 VGS (V) 20
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source voltage; typical values.
1996 Oct 02
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
handbook, halfpage
340
MGG107
800 C (pF) 600 C os
MRA930
RDS on (m) 280
400
220 200
C is
160 0 30 60 90 120 150 Tj (C)
0 0 10 20 30 40 VDS (V)
ID = 5 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values.
MGG108
handbook, halfpage
300
Crs (pF) 200
100
0 0 10 20 30 VDS (V) 40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values.
1996 Oct 02
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION RF performance in a linear amplifier (common source class-A circuit). Rth mb-h = 0.2 K/W; ZL = 1.1 + j0.2 unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) ID (A) Th (C) 70 Class-A 224.25 28 3 25 70 25 Note Po sync (W) > 24 typ. 30 typ. 20 typ. 22 GP (dB) > 14 typ. 16.5 typ. 14.5 typ. 15
BLF346
dim (dB) (1) -52 -52 -55 -55
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak synchronization level. Ruggedness in class-A operation The BLF346 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: VDS = 28 V; f = 225 MHz at rated output power.
handbook, halfpage
-50
MGG109
dim (dB) -55
(1) -60
(2)
-65
-70
0
10
20
30 Po sync (W)
40
(1) Th = 70 C. (2) Th = 25 C.
Fig.9
Intermodulation distortion as a function of peak synchronized output power.
1996 Oct 02
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
handbook, full pagewidth
C10 C2 50 input C1 L2 C4 L3 BLF346 C11 L1 C3 C5 C8 R1 C6 C9 R2 C7 L6 R4 R3 VB VDS C13 R5 C12 L5 DUT L4 L7
C14 C16 50 output L8
C15
MGG113
Fig.10 Test circuit for class-A operation at f = 225 MHz.
1996 Oct 02
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (see Figs 10 and 11). COMPONENT C1 C2 C3, C15, C16 C4, C5 C6, C12 C7, C8, C9 C10, C11 C13 C14 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor (note 1) electrolytic capacitor multilayer ceramic chip capacitor (note 1) 4 turns enamelled 0.7 mm copper wire stripline (note 2) stripline (note 2) 2 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube RF choke stripline (note 2) 3 turns enamelled 1.5 mm copper wire metal film resistor metal film resistor 10 turns cermet potentiometer metal film resistor metal film resistor 31 28.8 nH length 40 mm; width 6 mm length 8 mm; int. dia. 4 mm; leads 2 x 5 mm VALUE 2 to 18 pF 10 pF, 500 V 4 to 40 pF 56 pF, 500 V 680 pF, 500 V 100 nF, 50 V 43 pF, 500 V 10 F, 63 V 27 pF, 500 V 42.4 nH length 4 mm; int. dia. 3 mm; leads 2 x 5 mm length 49 mm; width 2.8 mm length 11.5 mm; width 6 mm length 8 mm; int. dia. 4 mm; leads 2 x 5 mm DIMENSIONS
BLF346
CATALOGUE NO. 2222 809 09003
2222 809 08002
2222 852 47104
2222 030 38109
L2 L3, L4 L5
50 31 18.7 nH
L6 L7 L8
4312 020 36642
R1 R2 R3 R4 R5 Notes
1 k, 0.4 W 100 k, 0.4 W 100 316 k, 0.4 W 10 , 0.4 W
2322 151 71002 2322 151 71004 2322 153 53161 2322 153 51009
1. American Technical Ceramics capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board with epoxy fibre-glass dielectric (r = 4.5); thickness 1 inch. 16
1996 Oct 02
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
handbook, full pagewidth
150
strap
strap
rivet 70
rivet
rivet
rivet
strap mounting screws (8x)
rivet
rivet
rivet
rivet
strap
R3
+VDS
L6 C7 C1 R2 C6 R1 C4 L2 C5 L3 L4 C11 C12 R5 L5 C10 L7 C8 C9
C13
C16
L1
C2
C14
L8
C3
C15
MGG114
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets.
Fig.11 Component layout for 225 MHz class-A test circuit.
1996 Oct 02
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF346
MGG110
MGG111
handbook, halfpage
4
Zi ()
handbook, halfpage
2
ri ZL () RL
2
0 1 -2 xi XL
-4
-6 160
180
200
220 f (MHz)
240
0 160
180
200
220 f (MHz)
240
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 C.
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 C.
Fig.12 Input impedance as a function of frequency (series components); typical values.
Fig.13 Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
20
MGG112
Gp (dB)
16
handbook, halfpage
12
8
Zi
ZL
MBA379
4
0 160
180
200
220 f (MHz)
240
Class-A operation; VDS = 28 V; ID = 3 A; PL = 30 W; Th = 70 C.
Fig.14 Definition of MOS impedance.
Fig.15 Power gain as a function of frequency; typical values.
1996 Oct 02
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE
BLF346
handbook, full pagewidth
22 max 6.35 4 min 5.7 5.3 0.14 ceramic 1 6.48 2
12.96
5.5 5.0
3
4
3.8 min 5.7 5.3
25.2 max 18.42
13 max
5
6
BeO 3.35 (2x) 3.04 12.2 2.5 4.50 4.05 metal
MBC877
7.5 max
Dimensions in mm.
Fig.16 SOT119.
1996 Oct 02
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF346
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Oct 02
12
Philips Semiconductors
Product specification
VHF power MOS transistor
NOTES
BLF346
1996 Oct 02
13
Philips Semiconductors
Product specification
VHF power MOS transistor
NOTES
BLF346
1996 Oct 02
14
Philips Semiconductors
Product specification
VHF power MOS transistor
NOTES
BLF346
1996 Oct 02
15
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA51
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127041/1200/04/pp16
Date of release: 1996 Oct 02
Document order number:
9397 750 01114

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